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KMID : 0380319690020000041
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Journal of Korean Research Institute for Better Living
1969 Volume.2 No. 0 p.41 ~ p.47
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Growth of CdS Single Crystals by Vapor Transport Method
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Abstract
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Cds Single Crystals were prepared from luminescent grade powder by the vapor transport method using high purity Argon gas as carrier gas. The temperature of inner furnace was kept from 900°C to 1050°C and the flow rate of Ar gas within the range of 20cc/m in.∼85cc/m in. We maintained this state for 2,5hr∼10hr. The longer the time of growth, the more irreguler the crystalforms, so that thickness and diameters of individual crystals could not growth further. Nweedle, rod, and platelet crystals were obtained. The mixing ratio of Crystal forms mainly depend upon the temperature of growing and flowing part and flowing rate of Ar gas. According to Laue Method, the crystals grown were judged as hexagonal. Espeicially, we recognized that many branches of platelet were obtained at the crystal planes (12 10), and crystal planes (2130) were predominant at the first experiment.
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